Si K and Co L3 XANES study of thin-film CoSi2
Abstract
X-ray absorption near edge structure (XANES) spectra of thin-film CoSi2 were measured at the Si K-and Co L3-edge. The Si K-edge spectrum for CoSi2 showed a dramatic reduction of intensity in the first broad feature accompanied by an increase in intensity of a peaked feature at higher energies when compared to the spectrum for crystalline Si. We attribute these two features to the Si 1s photoelectron excitations to a broad Si 3p nonbonding band and a relatively narrow band of hybridized Si p - Co 3d antibonding states, respectively. The Co L3-edge white line spectrum for CoSi2 reveals three distinct features which can be attributed to excitations to the unoccupied Co 3d nonbonding states and hybridized antibonding Co (3d, 4s) - Si p states.
Department(s)
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1016/s0368-2048(96)80038-7
Publication Date
1-1-1996
Recommended Citation
Pong, Way Faung, Y. K. Chang, Robert A. Mayanovic, G. H. Ho, H. J. Lin, S. H. Ko, P. K. Tseng, C. T. Chen, A. Hiraya, and Makoto Watanabe. "Si K and Co L3 XANES study of thin-film CoSi2." In Proceedings of the 11th International Conference on Vacuum Ultraviolet Radiation Physics, pp. 107-110. Elsevier, 1996.
Journal Title
Journal of Electron Spectroscopy and Related Phenomena
