X-ray-absorption near-edge structure (XANES) spectra of thin-film (Formula presented) were measured at the Si K edge and Co (Formula presented) edge using the total electron yield mode. The Si K-edge results for (Formula presented) showed a dramatic reduction of intensity in the first broad feature accompanied by a rise in a relatively strong and sharp feature at higher binding energies when compared to XANES spectra for crystalline Si. We attribute these two features to the Si 1s photoelectron excitations to a broad Si 3p nonbonding band and a relatively narrow band of hybridized Si p-Co 3d antibonding states, respectively. Analysis of the Co (Formula presented)-edge white line spectra for (Formula presented) reveals the appearance of a triple structure, which can be attributed to excitations to the unoccupied Co 3d nonbonding states and hybridized antibonding Co (3d,4s)-Si p states.


Physics, Astronomy, and Materials Science

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© 1996 The American Physical Society

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Physical Review B