X-ray-absorption near-edge structure (XANES) spectra of thin-film (Formula presented) were measured at the Si K edge and Co (Formula presented) edge using the total electron yield mode. The Si K-edge results for (Formula presented) showed a dramatic reduction of intensity in the first broad feature accompanied by a rise in a relatively strong and sharp feature at higher binding energies when compared to XANES spectra for crystalline Si. We attribute these two features to the Si 1s photoelectron excitations to a broad Si 3p nonbonding band and a relatively narrow band of hybridized Si p-Co 3d antibonding states, respectively. Analysis of the Co (Formula presented)-edge white line spectra for (Formula presented) reveals the appearance of a triple structure, which can be attributed to excitations to the unoccupied Co 3d nonbonding states and hybridized antibonding Co (3d,4s)-Si p states.
Physics, Astronomy, and Materials Science
© 1996 The American Physical Society
Pong, Way Faung, Y. K. Chang, Robert A. Mayanovic, G. H. Ho, H. J. Lin, S. H. Ko, P. K. Tseng, C. T. Chen, A. Hiraya, and M. Watanabe. "X-ray-absorption spectroscopy of CoSi 2." Physical Review B 53, no. 24 (1996): 16510.
Physical Review B