X-ray-absorption near-edge structure (XANES) spectra of thin-film (Formula presented) were measured at the Si K edge and Co (Formula presented) edge using the total electron yield mode. The Si K-edge results for (Formula presented) showed a dramatic reduction of intensity in the first broad feature accompanied by a rise in a relatively strong and sharp feature at higher binding energies when compared to XANES spectra for crystalline Si. We attribute these two features to the Si 1s photoelectron excitations to a broad Si 3p nonbonding band and a relatively narrow band of hybridized Si p-Co 3d antibonding states, respectively. Analysis of the Co (Formula presented)-edge white line spectra for (Formula presented) reveals the appearance of a triple structure, which can be attributed to excitations to the unoccupied Co 3d nonbonding states and hybridized antibonding Co (3d,4s)-Si p states.
Physics, Astronomy, and Materials Science
Pong, Way Faung; Chang, Y.; and Mayanovic, Robert A., "X-ray-absorption spectroscopy" (1996). Articles by College of Natural and Applied Sciences Faculty. 2130.
Physical Review B - Condensed Matter and Materials Physics