The structure of the Si(100)-(4 × 3) In surface studied by STM and ICISS
Abstract
When indium is deposited onto the Si(100)-(2 × 1) surface and annealed at temperatures between 200 and 500°C, scanning tunneling microscopy (STM) images show (4 × 3) reconstruction for coverages from 0.5 to 25 monolayers (ML). Although the STM images of the (4 × 3) geometry are not atom-resolved, an arrangement of atoms with a bow-tie like structure can be postulated. We use impact-collision ion-scattering spectrometry (ICISS) to carry out polar angle scans on the Si(100)-(4 × 3)In surface and perform computer-simulated fits using different atomic models of the bow-tie structure. A best fit to the experimental ICISS polar angle scans is obtained for one of the models tested.
Document Type
Article
DOI
https://doi.org/10.1016/0168-583X(94)95855-6
Publication Date
3-2-1994
Recommended Citation
Steele, B. E., D. M. Cornelison, Li Lian, and I. S. T. Tsong. "The structure of the Si (100)-(4× 3) In surface studied by STM and ICISS." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85, no. 1-4 (1994): 414-419.
Journal Title
Nuclear Inst. and Methods in Physics Research, B
