Electronic properties of ion-implanted polymer films

Abstract

Electronic properties of polystyrene-acrylonitrile (PSA) films, implanted with 20-175-keV nitrogen to a dose range of 5 × 1013 -5 × 1016 ions/cm2, were studied. Electrical conductivity of the films increases more than 17 orders of magnitude with increasing ion dose and beam energy. Temperature dependence of the conductivity suggests a composite hopping conduction in the films. Temperature dependence of piezoresistance shows that the variable-range hopping conduction is also responsible for piezoresistivity in the films. Hall coefficient measurements show no hall voltage with the experimental limit of ∼ 1 μV, indicating that a large number of carriers (> 1022 cm-3) are present in the implanted films. Optical absorption indicates a progressive optical gap closing as ion dose increases, suggesting a gradual phase transition from insulator to semiconductor. Graphitic properties were observed in the PSA film implanted with 175-keV N+2 ions to a dose of 5 × 1016 ions/cm2.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/S0168-583X(96)01162-7

Publication Date

1-1-1997

Journal Title

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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