Growth and coalescence in submonolayer homoepitaxy on Cu(100) studied with high-resolution low-energy electron diffraction
Abstract
By measuring the dependence of the island separation L on the flux F during submonolayer epitaxy on Cu(100), the scaling exponent p in LF-p/2 is determined in the steady-state and island coalescence regimes. In both regimes at low temperature (223 K), a crossover of p is observed from a low-flux value of 1/3 to a high-flux value of 1/2. At elevated temperatures (263305 K), p3/5 is obtained. These results agree with classic nucleation theories and recent Monte Carlo simulations, and imply that the smallest stable island changes directly to a tetramer from a low-temperature dimer with increasing temperature. Dissociation energy calculations using the embedded-atom method support these results. © 1994 The American Physical Society.
Department(s)
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1103/PhysRevLett.72.3064
Publication Date
1-1-1994
Recommended Citation
Zuo, J-K., J. F. Wendelken, H. Dürr, and C-L. Liu. "Growth and coalescence in submonolayer homoepitaxy on Cu (100) studied with high-resolution low-energy electron diffraction." Physical review letters 72, no. 19 (1994): 3064.
Journal Title
Physical Review Letters
