Fabrication and electrical characterization of Schottky diode based on 2-amino-4, 5-imidazoledicarbonitrile (AIDCN)

Abstract

The junction characteristics of the organic compound 2-amino-4, 5-imidazoledicarbonitrile (AIDCN) on p-type silicon substrate are studied in detail. AIDCN is deposited on silicon substrate using thermal evaporator. Current–voltage (I–V) characteristic of the device is measured at room temperature. The Au/AIDCN/p-Si device shows non-linear I–V characteristic with rectification ratio of 7.2×103 at 5 V. The electronic device parameters such as barrier height, ideality factor, and series resistance are calculated using I–V data and observed to be 0.74 eV, 3.00, and 3.73×104 Ω respectively.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.physe.2009.07.009

Keywords

amorphous films, rganics, semiconductors, transport properties

Publication Date

2009

Journal Title

Physica E: Low-dimensional Systems and Nanostructures

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