Band gap engineering of ZnO thin films by In2O3 incorporation

Abstract

Highly transparent and conducting thin films of ZnO–In2O3 were deposited using pulsed laser deposition (PLD) technique. The effect of composition and growth temperature on structural, electrical, and optical properties was studied. The lowest resistivity of 2.11×10−4 Ω cm and high transparency (∼80%) was obtained for the film having 5% In2O3 in ZnO. The band gap of the films depends on doping level and varies from 3.37 to 3.95 eV.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.jcrysgro.2008.03.004

Keywords

A1. hall effect, A1. mobility, B1. zinc oxide, B1. indium oxide, A3. pulsed laser deposition, B3. transparent electrode

Publication Date

2008

Journal Title

Journal of crystal growth

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