Use Of Ion Implantation In Electrical & Optical Property Modification Of A Polymer-Based Semiconductor
Date of Graduation
Summer 2003
Degree
Master of Science in Materials Science
Department
Physics, Astronomy, and Materials Science
Committee Chair
Ryan Giedd
Abstract
PSA (Polystyrene Acrylonitrile) substrates covered with different thickness of Au thin film are implanted with 50KeV N⁺ ions to a dose of 10¹⁶ ions/cm². Electrical and optical properties such as room temperature sheet resistance, low temperature sheet resistance, temperature coefficient of resistance, room temperature ageing effect, and responsivity are measured. SEM and TEM investigations are performed to study the destructive effect of ion implantation. Experimental results show that ion implantation techniques as well as the Au deposition thickness effectively control the electrical and optical properties of the material. Also in this paper, theory of polymer ion implantation, techniques of sample development, and experiments are discussed. Future research focus is suggested.
Subject Categories
Materials Science and Engineering
Copyright
© Ye Zhang
Recommended Citation
Zhang, Ye, "Use Of Ion Implantation In Electrical & Optical Property Modification Of A Polymer-Based Semiconductor" (2003). MSU Graduate Theses/Dissertations. 2236.
https://bearworks.missouristate.edu/theses/2236
Dissertation/Thesis
