Date of Graduation

Summer 2009

Degree

Master of Science in Materials Science

Department

Physics, Astronomy, and Materials Science

Committee Chair

Shyang Huang

Abstract

The capability of precise control on the doping and composition profile, uniformity of the film and stoichiometry are key factors of molecular beam epitaxy (MBE) to become a versatile thin film deposition technique in the semiconductor technology. In order to bring the MBE system into working condition, several components such as effusion cells, shutters, a beam flux monitor, an isolation gate valve, a load lock, and a contact metal strip for the substrate resistive heating were designed and installed. In the MBE technique, ultra high vacuum (UHV) is a necessary requirement for thin film growth and some in situ characterizations. To achieve UHV, new vacuum pumps were installed, and proper baking procedures were followed. Residual gas analyzer (RGA) data were used to analyze the residual gases inside the system and for leak detection. Testing of the radio frequency (RF) plasma source, testing of MBE sources, and degassing the MBE crucibles have been performed prior to thin film growth. In addition to testing, substrate temperature was manipulated by using a resistive heating method. Finally, magnesium oxide (MgO) thin films on silicon carbide (SiC) substrates were grown by using reconstructed MBE system.

Keywords

MBE, instrumentation, growth, UHV, thin film, magnesium oxide, silicon carbide

Subject Categories

Materials Science and Engineering

Copyright

© Krishnamraju Ankireddy

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