Structural, optical and electrical characterization of highly conducting Mo-doped In 2 O 3 thin films

Abstract

Highly conducting and transparent thin films of molybdenum-doped indium oxide were deposited on quartz by pulsed laser deposition. The effect of growth temperature and oxygen partial pressure on the structural, optical and electrical properties was studied. We find that the film transparency depends on the growth temperature. The average transmittance of the films grown at different temperatures is in range of 48-87%. The X-ray diffraction results show that the films grown at low temperature are amorphous while the films grown at higher temperature are crystalline. Electrical properties are found to be sensitive to both the growth temperature and oxygen pressure. Resistivity of the films decreases from 1.3 × 10 -3 Ω cm to 8.9 × 10 -5 Ω cm while mobility increases from 9 cm 2 /V s to 138 cm 2 /V s as the growth temperature increases from room temperature to 700 °C. However, with increase in oxygen pressure, resistivity increases but the mobility decreases after attaining a maximum. The temperature-dependent resistivity measurements show transition form semiconductor to metallic behavior. The film grown at 500 °C under an oxygen pressure of 1.0 × 10 -3 mbar is found to exhibit high mobility (250 cm 2 /V s), low resistivity (6.7 × 10 -5 Ω cm), and relatively high transmittance (∼90%).

Department(s)

JVIC-Center for Biomedical and Life Sciences
Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.apsusc.2007.12.035

Keywords

Electrical properties, Indium oxide, Molybdenum, Optical materials and properties, Semiconductor, Thin films

Publication Date

4-30-2008

Journal Title

Applied Surface Science

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