P-Si/DNA photoconductive diode for optical sensor applications

Abstract

The junction parameters of Al/p-Si/Ag and Al/p-Si/DNA/Ag diodes were studied using current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f) measurements. The photoresponse properties of the diodes were analyzed using transient photocurrent measurements. The photoresponse of the Al/p-Si/DNA/Ag diode is better than that of Al/p-Si/Ag diode. The ideality factor and barrier height values of the Al/p-Si/DNA/Ag diode were obtained to be 1.2 ± 0.1 and 0.56 ± 0.02 eV, respectively. The capacitance of the diodes increases with decreasing frequency which is explained by the change in the interface states. These results indicate that the p-Si/DNA junction could be used as an optical sensor.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.synthmet.2011.07.016

Keywords

DNA, Ideality factor, Organic material, Photoresponse, Schottky diode

Publication Date

9-1-2011

Journal Title

Synthetic Metals

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