Fabrication and characterization of p-n junctions based on ZnO and CuPc

Abstract

p-n Junctions based on zinc oxide (ZnO) and copper-phthalocyanine (CuPc) were fabricated using pulsed laser deposition and thermal evaporator techniques, respectively. Current-voltage (I-V) characteristics of the ZnO-CuPc junction showed rectifying behavior. Various junction parameters such as barrier height and ideality factor were calculated using I-V data and observed to be 0.63 ± 0.02 eV and 4.0 ± 0.3, respectively. Cheung and Norde's method were used to compare the junction parameters obtained by I-V characteristics.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.mee.2011.05.023

Keywords

p–n Junction, ZnO, CuPc, pulsed laser, thermal evaporator, thin films, semiconductor

Publication Date

2011

Journal Title

Microelectronic engineering

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