Epitaxial growth of MgFe2O4 (111) thin films on sapphire (0001) substrate

Abstract

Pulsed laser deposition technique is used to fabricate thin films of MgFe O on sapphire substrate. X-ray diffraction patterns show that films are epitaxial along (lll) direction on c-axis oriented sapphire. The observation of six fold symmetry in phi scan for the film suggests the presence of twinned in-plane alignments. The presence of magnetic hysteresis loop at room temperature indicates the ferromagnetic behavior of the film. The coercive field of 742 Oe and remnant magnetization of 151 emu/cm is observed at room temperature. The coercive field and remnant magnetization decrease with increase in temperature.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.matlet.2011.06.091

Keywords

Epitaxial thin films, Ferromagnetic, MgFe O 2 4, Pulsed laser deposition

Publication Date

10-1-2011

Journal Title

Materials Letters

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