Epitaxial growth of MgFe2O4 (111) thin films on sapphire (0001) substrate
Abstract
Pulsed laser deposition technique is used to fabricate thin films of MgFe O on sapphire substrate. X-ray diffraction patterns show that films are epitaxial along (lll) direction on c-axis oriented sapphire. The observation of six fold symmetry in phi scan for the film suggests the presence of twinned in-plane alignments. The presence of magnetic hysteresis loop at room temperature indicates the ferromagnetic behavior of the film. The coercive field of 742 Oe and remnant magnetization of 151 emu/cm is observed at room temperature. The coercive field and remnant magnetization decrease with increase in temperature.
Department(s)
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1016/j.matlet.2011.06.091
Keywords
Epitaxial thin films, Ferromagnetic, MgFe O 2 4, Pulsed laser deposition
Publication Date
10-1-2011
Recommended Citation
Gupta, R. K., and F. Yakuphanoglu. "Epitaxial growth of MgFe2O4 (111) thin films on sapphire (0001) substrate." Materials Letters 65, no. 19-20 (2011): 3058-3060.
Journal Title
Materials Letters
